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2SC4915OTE85L

Description
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size280KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC4915OTE85L Overview

TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

2SC4915OTE85L Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
Maximum collector current (IC)0.02 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Minimum power gain (Gp)17 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)550 MHz
Base Number Matches1
2SC4915
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4915
High Frequency Amplifier Applications
FM, RF, MIX, If Amplifier Applications
Small reverse transfer capacitance: C
re
= 0.55 pF (typ.)
Low noise figure: NF = 2.3dB (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
40
30
4
20
4
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2H1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Weight: 2.4 mg (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
Symbol
I
CBO
I
EBO
h
FE
(Note)
C
re
f
T
C
c
½rbb’
NF
G
pe
Test Condition
V
CB
=
40 V, I
E
=
0 A
V
EB
=
4 V, I
C
=
0 A
V
CE
=
6 V, I
C
=
1 mA
V
CB
=
6 V, f
=
1 MHz
V
CE
=
6 V, I
C
=
1 mA
V
CE
=
6 V, I
E
= −1
mA, f
=
30 MHz
V
CC
=
6 V, I
E
= −1
mA,
f
=
100 MHz, Figure 1
Min
40
260
17
Typ.
0.55
550
2.3
23
Max
0.1
0.5
200
20
5.0
pF
MHz
ps
dB
dB
Unit
μA
μA
Note: h
FE
classification R: 40~80, O: 70~140, Y: 100~200
1
2007-11-01

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