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2SC4915R(TE85L,F)

Description
TRANSISTOR,BJT,NPN,30V V(BR)CEO,20MA I(C),SOT-416
CategoryDiscrete semiconductor    The transistor   
File Size285KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SC4915R(TE85L,F) Overview

TRANSISTOR,BJT,NPN,30V V(BR)CEO,20MA I(C),SOT-416

2SC4915R(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.02 A
ConfigurationSingle
Minimum DC current gain (hFE)40
Maximum operating temperature125 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
surface mountYES
Nominal transition frequency (fT)260 MHz
Base Number Matches1
2SC4915
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4915
High Frequency Amplifier Applications
FM, RF, MIX, If Amplifier Applications
Small reverse transfer capacitance: C
re
= 0.55 pF (typ.)
Low noise figure: NF = 2.3dB (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
40
30
4
20
4
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-2H1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Weight: 2.4 mg (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
Symbol
I
CBO
I
EBO
h
FE
(Note)
C
re
f
T
C
c
½rbb’
NF
G
pe
Test Condition
V
CB
=
40 V, I
E
=
0 A
V
EB
=
4 V, I
C
=
0 A
V
CE
=
6 V, I
C
=
1 mA
V
CB
=
6 V, f
=
1 MHz
V
CE
=
6 V, I
C
=
1 mA
V
CE
=
6 V, I
E
= −1
mA, f
=
30 MHz
V
CC
=
6 V, I
E
= −1
mA,
f
=
100 MHz, Figure 1
Min
40
260
17
Typ.
0.55
550
2.3
23
Max
0.1
0.5
200
20
5.0
pF
MHz
ps
dB
dB
Unit
μA
μA
Note: h
FE
classification R: 40~80, O: 70~140, Y: 100~200
1
2007-11-01

2SC4915R(TE85L,F) Related Products

2SC4915R(TE85L,F) 2SC4915R(TE85L) 2SC4915O(TE85L,F)
Description TRANSISTOR,BJT,NPN,30V V(BR)CEO,20MA I(C),SOT-416 TRANSISTOR,BJT,NPN,30V V(BR)CEO,20MA I(C),SOT-416 TRANSISTOR,BJT,NPN,30V V(BR)CEO,20MA I(C),SOT-416
Is it Rohs certified? conform to incompatible conform to
Reach Compliance Code unknow unknow unknow
Maximum collector current (IC) 0.02 A 0.02 A 0.02 A
Configuration Single Single Single
Minimum DC current gain (hFE) 40 40 70
Maximum operating temperature 125 °C 125 °C 125 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.1 W 0.1 W 0.1 W
surface mount YES YES YES
Nominal transition frequency (fT) 260 MHz 260 MHz 260 MHz
Base Number Matches 1 1 1

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