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2SC5677-FB-A

Description
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size97KB,22 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SC5677-FB-A Overview

L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3

2SC5677-FB-A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-based maximum capacity1.2 pF
Collector-emitter maximum voltage5.5 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-PDSO-F3
JESD-609 codee6
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)5500 MHz
Base Number Matches1
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5677
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
• Low voltage operation, low phase distortion
• Ideal for OSC applications
• 3-pin lead-less minimold package
ORDERING INFORMATION
Part Number
2SC5677
2SC5677-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
9
5.5
1.5
100
140
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10084EJ02V0DS (2nd edition)
Date Published March 2002 CP(K)
Printed in Japan
The mark
shows major revised points.
©
NEC Corporation 2001
©
NEC Compound Semiconductor Devices 2002

2SC5677-FB-A Related Products

2SC5677-FB-A 2SC5677-T3FB-A 2SC5677-FB
Description L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3
Is it lead-free? Lead free Lead free Contains lead
Is it Rohs certified? conform to conform to incompatible
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 1.2 pF 1.2 pF 1.2 pF
Collector-emitter maximum voltage 5.5 V 5.5 V 5.5 V
Configuration SINGLE SINGLE SINGLE
highest frequency band L BAND L BAND L BAND
JESD-30 code R-PDSO-F3 R-PDSO-F3 R-PDSO-F3
JESD-609 code e6 e6 e0
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface TIN BISMUTH TIN BISMUTH TIN LEAD
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 5500 MHz 5500 MHz 5500 MHz
Base Number Matches 1 1 1
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