2SB1184
PNP PLASTIC ENCAPSULATE TRANSISTORS
P b
Lead(Pb)-Free
Features:
* Low V
CE
(sat). V
CE
(sat) = -0.5V (Typ.) (I
C
/I
B
= -2A / -0.2A)
).
MAXIMUM RATINGS (T
A
=25ºC unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
1.BASE
2.COLLECTOR
3.EMITTER
TO-251
V
V
V
A
W
˚C
˚C
1.BASE
2.COLLECTOR
3.EMITTER
2
3
Symbol
V CBO
V CEO
V EBO
IC
Pc
Tj
T stg
Value
-60
-50
-5
-3
1
+150
-55 to +150
Unit
1
D-PAK(TO-252)
ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
Test Conditions
I
C
=
-50
µA,
I
E
=0
I
C
=
-1
mA, I
B
=0
I
E
=
-50
µA,
I
C
=0
V
CB
=
-40
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-3
V, I
C
=
-0.5
A
I
C
=
-2
A, I
B
=
-0.2
A
I
C
=
-1.5
A, I
B
=
-0.15
A
V
CE
=
-5
V, I
C
=
-0.5
A, f=
30
MHz
V
CB
=
-10
V, I
E
=0, f=
1
MHz
MIN
-60
-50
-5
TYP
MAX UNIT
V
V
V
-1
-1
82
390
-1
-1.2
70
50
µA
µA
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
P
82-180
Q
120-270
R
180-390
WEITRON
http://www.weitron.com.tw
1/4
05-Oct-2010
2SB1184
TO-251 Outline Dimensions
unit:mm
E
A
4
TO-251
G
H
B
1
2
3
J
N
D
M
K
C
L
Dim
A
B
C
D
E
G
H
J
K
L
M
N
M in
6 .4 0
6 .8 0
0 .5 0
-
2 .2 0
0 .4 5
1 .0 0
5 .4 0
0 .4 5
0 .9 0
6 .5 0
-
M ax
6 .8 0
7 .2 0
0 .8 0
2 .3 0
2 .5 0
0 .5 5
1 .6 0
5 .8 0
0 .6 9
1 .5 0
-
0 .9 0
1 . Em it t er
2 . Base
3 . Collect or
TO-252 Outline Dimensions
unit:mm
E
A
4
G
H
J
1
2
3
B
TO-252
Dim
A
B
C
D
E
G
H
J
K
L
M
M
D
C
L
K
Min
6.40
9.00
0.50
-
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
WEITRON
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05-Oct-2010
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