2SC5024 datasheet, PDF - EEWORLD Datasheet

2SC5024: DescriptionPower Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126FM, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size39KB，6 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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2SC5024 Overview

Power Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126FM, 3 PIN

Parameter Name	Attribute value
Parts packaging code	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Base Number Matches	1

2SC5024

Silicon NPN Epitaxial

Application

High frequency amplifier

Features

•

Excellent high frequency characteristics f

= 300 MHz typ

•

High breakdown voltage and low output capacitance V

CEO

= 200 V, Cob = 5.0 pF typ

•

Suitable for wide band video amplifier

•

Complimentary pair of 2SA1889

Outline

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