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JANSF2N7469U2

Description
Power Field-Effect Transistor, 75A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size126KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

JANSF2N7469U2 Overview

Power Field-Effect Transistor, 75A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

JANSF2N7469U2 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
package instructionCHIP CARRIER, R-CBCC-N3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)363 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.012 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)300 A
Certification statusNot Qualified
GuidelineMIL-19500/673
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 91860I
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA57160 100K Rads (Si)
IRHNA53160
IRHNA54160
300K Rads (Si)
500K Rads (Si)
R
DS(on)
0.012Ω
0.012Ω
0.012Ω
0.013Ω
IRHNA57160
JANSR2N7469U2
100V, N-CHANNEL
REF: MIL-PRF-19500/673
5

TECHNOLOGY
™
I
D
QPL Part Number
75A* JANSR2N7469U2
75A* JANSF2N7469U2
75A* JANSG2N7469U2
75A* JANSH2N7469U2
IRHNA58160 1000K Rads (Si)
TM
SMD-2
International Rectifier’s R5 technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
300 (for 5s)
3.3 (Typical)
75*
69
300
250
2.0
±20
363
75
25
6.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
04/26/06

JANSF2N7469U2 Related Products

JANSF2N7469U2 JANSH2N7469U2 JANSG2N7469U2 JANSR2N7469U2
Description Power Field-Effect Transistor, 75A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN Power Field-Effect Transistor, 75A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN Power Field-Effect Transistor, 75A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN Power Field-Effect Transistor, 75A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SURFACE MOUNT PACKAGE-3
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3 CHIP CARRIER, R-CBCC-N3
Contacts 3 3 3 3
Reach Compliance Code unknown unknown compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 363 mJ 363 mJ 363 mJ 363 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V 100 V
Maximum drain current (ID) 75 A 75 A 75 A 75 A
Maximum drain-source on-resistance 0.012 Ω 0.012 Ω 0.012 Ω 0.012 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-CBCC-N3 R-CBCC-N3 R-CBCC-N3 R-CBCC-N3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 300 A 300 A 300 A 300 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Guideline MIL-19500/673 MIL-19500/673 MIL-19500/673 MIL-19500/673
surface mount YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Is it lead-free? Contains lead Contains lead Contains lead -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -

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