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2SC4046E

Description
Small Signal Bipolar Transistor, 0.2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126MOD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size26KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SC4046E Overview

Small Signal Bipolar Transistor, 0.2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126MOD, 3 PIN

2SC4046E Parametric

Parameter NameAttribute value
Parts packaging codeSIP
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)400
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)8 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)350 MHz
Base Number Matches1
2SC4046
Silicon NPN Epitaxial
Application
High voltage amplifier
Outline
TO-126 MOD
1
1. Emitter
2. Collector
3. Base
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
Tj
Tstg
1
Ratings
120
120
5
0.2
8
150
–55 to +150
Unit
V
V
V
A
W
°C
°C

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