2SD2113 datasheet, PDF - EEWORLD Datasheet

2SD2113: DescriptionPower Bipolar Transistor, 3A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220FM, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size117KB，4 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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2SD2113 Overview

Power Bipolar Transistor, 3A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220FM, 3 PIN

Parameter Name	Attribute value
Parts packaging code	TO-220FM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	120 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	1000
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	25 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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