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MAALSS0012TR

Description
IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,TSSOP,6PIN,PLASTIC
CategoryWireless rf/communication    Radio frequency and microwave   
File Size161KB,8 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric Compare View All

MAALSS0012TR Overview

IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,TSSOP,6PIN,PLASTIC

MAALSS0012TR Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionMINIATURE, PLASTIC, SC-88, SOT-363, 6 PIN
Reach Compliance Codeunknown
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals6
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeTSSOP6,.08
power supply3/5 V
Maximum slew rate100 mA
surface mountYES
technologyGAAS
Miniature Broadband Gain Stage
200 - 3000 MHz
V 4.00
MAALSS0012
Features
!
!
!
!
Functional Block Diagram
Vdd
Cdd
Ldd
RF OUT
PIN 6
GND
GND
Low Noise Figure
High IP
3
Single +3 V or +5 V Supply Voltage
Very Stable Over Temperature
Description
M/A-COM’s MAALSS0012 broadband gain stage is a
GaAs MMIC amplifier in a low-cost miniature SOT-363
surface mount plastic package.
The MAALSS0012
employs a monolithic 1-stage self-biased design featuring a
convenient 50 ohm input/output impedance that minimizes
the number of external components required. The device
typically runs from a single 3.0 volt supply and may also
operate at any voltage up to 5.0 volts for improved power
performance.
Its broadband design provides usable
performance from 200 to 3000 MHz.
M/A-COM fabricates the MAALSS0012 using an E/D
MESFET process to realize low noise and high dynamic
range.
The process features full passivation for
performance and reliability.
PIN 1
GND
GND
RF IN
External Circuitry
Part
C
dd
L
dd
Value
470 pF
12 nH
Purpose
Decoupling capacitor
RF choke
Electrical Specifications
1
:
Parameter
Gain
2
T
A
= 25 °C
+3 V
+5 V
Max.
15.0
12.9
2.0
2.0
Min.
13.2
11.0
Typ.
14.2
12.0
9.6
1.5
1.5
1.6
9.4
13.2
14.7
9.7
15.5
33.0
21
36
87
Max.
15.2
13.0
2.0
2.0
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
mA
Min.
13.0
10.9
Typ.
14.0
11.9
9.4
1.4
1.4
1.5
9.3
13.2
14.9
9.0
15.2
27.0
18
33
79
Test Conditions
F = 0.9 GHz
F = 1.9 GHz
F = 3.0 GHz
F = 0.9 GHz
F = 1.9 GHz
F = 3.0 GHz
F = 0.9 GHz
F = 1.9 GHz
F = 3.0 GHz
F = 0.9 GHz
F = 1.9 GHz
F = 3.0 GHz
200 – 3000 MHz
200 – 3000 MHz
Noise Figure
3
Input Return Loss
Output Return Loss
1dB Compression
Output IP
3
Current
50
95
65
100
1. All measurements taken in a 50-Ω system unless otherwise specified.
2. Gain varies at -0.0025 dB/°C typical.
3. Noise figure varies at 0.007 dB/°C typical.

MAALSS0012TR Related Products

MAALSS0012TR MAALSS0012 MAALSS0012-3000
Description IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,TSSOP,6PIN,PLASTIC IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,TSSOP,6PIN,PLASTIC 200MHz - 3000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, MINIATURE, PLASTIC, SC-70, SOT-363, 6 PIN
Reach Compliance Code unknown unknown unknown
Maximum operating temperature 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Is Samacsys - N N
Characteristic impedance - 50 Ω 50 Ω
structure - COMPONENT COMPONENT
Gain - 9.6 dB 11 dB
Maximum input power (CW) - 15 dBm 15 dBm
Maximum operating frequency - 3000 MHz 3000 MHz
Minimum operating frequency - 70 MHz 200 MHz
RF/Microwave Device Types - WIDE BAND LOW POWER WIDE BAND LOW POWER
Base Number Matches - 1 1
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