2SD669B datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2SD669B

2SD669B: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size93KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

Download Datasheet Parametric View All

2SD669B Overview

Transistor

2SD669B Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	1.5 A
Configuration	Single
Minimum DC current gain (hFE)	60
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
surface mount	NO
Base Number Matches	1

2SD669B Preview

Download Datasheet

View All

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126C Plastic-Encapsulate Transistors

2SD669

2SD669A

TRANSISTOR (NPN)

TO- 126C

FEATURES

Low frequency power amplifier complementary pair

with 2SB649/A

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbol

CBO

CEO

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

2SD669

2SD669A

EBO

stg

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Junction Temperature

Storage Temperature

Value

180

120

160

1.5

150

-55-150

Units

℃

1. EMITTER

2. COLLECTOR

3. BASE

ELECTRICAL CHARACTERISTICS (Tamb=25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

FE(1)

DC current gain

FE(2)

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

CE(sat)

unless

Test

otherwise

conditions

specified)

MIN

180

TYP

MAX

UNIT

µA

=1mA, I

=10mA, I

2DS669

2SD669A

=1mA, I

=160V, I

=4V, I

=5V, I

=150mA

2SD669

2SD669A

=5V, I

=500mA

=500mA, I

=50mA

=5V, I

=150mA

=5V, I

=150mA

=10V, I

=0, f=1MHz

120

160

320

200

1.5

140

MHz

CLASSIFICATION OF

Rank

Range

2SD669

2SD669A

FE(1)

60-120

100-200

160-320

Recommended Resources

Voltage transformer circuit a

Overcurrent and overvoltage protection circuit diagram of electronic ballast

Set type pulse width generating circuit (2)

Boiler water level alarm

555 microwave anti-theft alarm circuit

AD issues related to STM32: In a recent project, I will use STM32's four-channel AD acquisition voltage of 0 to 5V. Due to the industrial environment, all IOs of STM32 are isolated by optocouplers. Will AD directly use STM32's A...; 908508455a stm32/stm8

Journey to the West: Ten Outstanding Young People: 1. Sun Wukong is an outstanding representative of the first batch of pilots in Chinese history. After long-term hard training, Sun Wukong finally mastered the flying skills that have never been seen b...; 张无忌1987 Talking

Hybrid electric vehicles are expected to become the leading product in the automotive industry: Early development of hybrid electric vehicles Hybrid electric vehicles (HEV) are new models that have been developed before the ideal high-quality specific energy and mass-to-power vehicle power suppl...; frozenviolet Automotive Electronics

Comparison and discussion of data processing speed between LPC1768 and LPC54102: 1. Purpose: To compare the data processing speed of 1768 and 54102 at 100MHz 2. Data: posdata_sum = 0x0; for(i=6;i>0;i--) { posdata_sum += posdata_tmp; } posdata_avg = posdata_sum >> 4; posdata_um = p...; liuyuedeyu NXP MCU

Help! Can LaunchPad use USB BSL to download programs?: TI says G2553 has BSL, but I still don't understand it after reading the technical manual for a long time... Can anyone tell me how to use USB BSL to download programs for G2553? I have a BSL download...; southwolf1813 Microcontroller MCU

Share some explanations of #define definitions in the IAR 430 header file: I found several questions when reading the header file cc430x613x.h in RF_Example_Code_v1.0. First, let's look at the three #define examples in cc430x613x.h: #define DEFC(name, address) __no_init vola...; fish001 Microcontroller MCU

Popular Components