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2N5742

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size117KB,3 Pages
ManufacturerInchange Semiconductor
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2N5742 Overview

Transistor

2N5742 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5741 2N5742
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・Fast
switching speed
APPLICATIONS
・For
general–purpose switching
and power amplifier applications.
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
固电
导½
ES
NG
2N5741
2N5742
2N5741
2N5742
Open collector
Open emitter
V
CBO
Collector-base voltage
V
CEO
HA
INC
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-100
-60
-100
-5
-20
UNIT
V
Collector-emitter voltage
Open base
V
V
EBO
I
C
P
C
T
j
T
stg
V
A
W
Collector power dissipation
T
C
=100℃
65
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W

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2N5742 2N5741
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Reach Compliance Code unknow unknow
Base Number Matches 1 1
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