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2N5744

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size126KB,3 Pages
ManufacturerInchange Semiconductor
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2N5744 Overview

Transistor

2N5744 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5743 2N5744
DESCRIPTION
・With
TO-66 package
・Low
collector saturation voltage
・Fast
switching speed
APPLICATIONS
・For
general–purpose switching
and power amplifier applications.
PINNING
PIN
1
2
3
l
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
固电
IN
导½
ES
NG
2N5743
2N5744
2N5743
2N5744
Open base
Collector-base voltage
Open emitter
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
HA
C
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-100
-60
-100
-5
-20
UNIT
V
V
V
A
W
Open collector
Collector power dissipation
Junction temperature
Storage temperature
T
C
=100℃
25
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W

2N5744 Related Products

2N5744 2N5743
Description Transistor Transistor
Reach Compliance Code unknow unknow
Base Number Matches 1 1

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