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2SD2470E

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size66KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

2SD2470E Overview

Transistor

2SD2470E Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)5 A
ConfigurationSingle
Minimum DC current gain (hFE)390
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.4 W
surface mountNO
Base Number Matches1
UTC 2SD2470
NPN EPITAXIAL SILICON TRANSISTOR
Strobo and DC/DC Converters
FEATURES
*Low saturation voltage
V
CE
(sat)= 0.25V(typ) at Ic/I
B
= 3A/0.1A
*Collector current of 5A is possible
1
TO-92SP
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(PULSE)*
Collector Power Dissipation
Junction Temperature
Storage Temperature
*Single Pulse =10ms
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Icp
Pc
T
j
T
STG
RATING
15
10
10
5
8
0.4
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
Cob
TEST CONDITIONS
Ic= 50μA
Ic= 1mA
I
E
=50μA
V
CB
=10V, I
E
=0
V
EB
= 8V, Ic=0
V
CE
= 2V,Ic= 2A
Ic/I
B
=3A /0.1A
V
CE
=6V, I
E
=0.05A,f=100MHz
V
CB
= 10V, I
E
= 0 A,f=1MHz
MIN
15
10
10
TYP
MAX
UNIT
V
V
V
μA
μA
V
MHz
pF
270
0.25
170
30
0.1
0.5
820
0.5
CLASSIFICATION OF h
FE
RANK
RANGE
S
270~560
E
450~820
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R216-003,C

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