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2SC4667-Y(TE85L)

Description
2SC4667-Y(TE85L)
CategoryDiscrete semiconductor    The transistor   
File Size214KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC4667-Y(TE85L) Overview

2SC4667-Y(TE85L)

2SC4667-Y(TE85L) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
2SC4667
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC4667
Ultra High Speed Switching Applications
Computer, Counter Applications
High transition frequency: f
T
= 400 MHz (typ.)
Low saturation voltage: V
CE (sat)
= 0.3 V (max)
High speed switching time: t
stg
= 15 ns (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
40
15
5
200
40
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.006 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01

2SC4667-Y(TE85L) Related Products

2SC4667-Y(TE85L) 2SC4667-R(TE85L,F) 2SC4667-Y(TE85L,F)
Description 2SC4667-Y(TE85L) TRANSISTOR,BJT,NPN,15V V(BR)CEO,200MA I(C),SC-70 TRANSISTOR,BJT,NPN,15V V(BR)CEO,200MA I(C),SC-70
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
Is it Rohs certified? - conform to conform to
Maximum collector current (IC) - 0.2 A 0.2 A
Configuration - Single Single
Minimum DC current gain (hFE) - 40 120
Maximum operating temperature - 125 °C 125 °C
Polarity/channel type - NPN NPN
Maximum power dissipation(Abs) - 0.1 W 0.1 W
surface mount - YES YES
Nominal transition frequency (fT) - 200 MHz 200 MHz

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