2SD1471
Silicon NPN Planar, Darlington
Application
High gain amplifier
Outline
UPAK
1
3
2
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
1
3
2SD1471
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
Tstg
Ratings
40
30
10
300
500
1
150
–55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
Notes: 1. Pulse
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
40
30
10
—
—
2000
3000
3000
—
—
Typ
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
1
10
100000
—
—
1.5
2.0
V
V
Unit
V
V
V
µA
µA
Test conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 1 mA, R
BE
=
∞
I
E
= 10
µA,
I
C
= 0
V
CB
= 30 V, I
E
= 0
V
CE
= 24 V, R
BE
=
∞
V
CE
= 5 V, I
C
= 10 mA*
2
V
CE
= 5 V, I
C
= 100 mA*
2
V
CE
= 5 V, I
C
= 400 mA*
2
I
C
= 100 mA, I
B
= 0.1 mA*
2
I
C
= 100 mA, I
B
= 0.1 mA*
2
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
h
FE1
*
1
h
FE2
*
1
h
FE3
*
1
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
V
CE(sat)
V
BE(sat)
Notes: 1. The 2SD1471 is grouped by h
FE
as follows.
2. Pulse test
Mark
h
FE1
h
FE2
h
FE3
DT
ET
2000 to 100000 5000 to 100000
3000 min
3000 min
10000 min
10000 min
2
2SD1471
Maximum Collector Dissipation Curve
1.2
Collector Power Dissipation P
C
(W)
(on the alumina ceramic board)
Collector Current I
C
(A)
Area of Safe Operation
1.0
0.3
0.1
0.03
0.01
0.003
0.001
0
100
150
50
Ambient Temperature Ta (°C)
3
100
300
10
30
Collector to Emitter Voltage V
CE
(V)
i
C(peak)
PW
1m
s
1
µs
=1
s
0m
0.8
Ta = 25°C
1 Shot Pulse
0.4
Typical Output Characteristics
Ta = 25°C
20
18
16
14
12
10
8
6
4
2
µ
I
B
= 0 A
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
DC Current Transfer Ratio h
FE
(×10
3
)
0.5
P
C
=
1W
DC Current Transfer Ratio vs.
Collector Current
300
V
CE
= 3 V
Pulse
Collector Current I
C
(A)
0.4
100
0.3
30
0.2
Ta = 75
°
C
25
–25
10
0.1
0
3
10
30
100
300
Collector Current I
C
(mA)
1,000
3
2SD1471
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Base to Emitter Saturation Voltage V
BE(sat)
(V)
Saturation Voltage vs.
Collector Current
10
3
V
BE(sat)
1.0
V
CE(sat)
0.3
Ta = 25°C
I
C
/I
B
= 1,000
0.1
10
30
100
300
Collector Current I
C
(mA)
1,000
Transient Thermal Resistance
300
Thermal Resistance
θ
j-a
(°C/W)
100
30
10
3
1.0
0.3
1m
Ta = 25°C
On The Alumina Ceramic Board (12.5×30×0.7 mm)
10 m
100 m
1
Time t (s)
10
100
1,000
4
Unit: mm
4.5
±
0.1
0.4
1.8 Max
φ
1
1.5
±
0.1
0.44 Max
(2.5)
(1.5)
1.5 1.5
3.0
0.8 Min
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.4)
0.53 Max
0.48 Max
2.5
±
0.1
4.25 Max
UPAK
—
Conforms
0.050 g
(0.2)
Automotive Electronics
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