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2SC4116-Y-TP-HF

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size389KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric Compare View All

2SC4116-Y-TP-HF Overview

Small Signal Bipolar Transistor,

2SC4116-Y-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
2SC4116-O
2SC4116-Y
2SC4116-GR
2SC4116-BL
NPN
Plastic-Encapsulate
Transistors
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
High voltage and high current
Complementary to 2SA1586
Halogen
free available upon request by adding suffix "-HF"
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
60
50
5
150
100
150
-55 to +150
Unit
V
V
V
mA
mW
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
SOT-323
A
D
C
C
B
B
F
E
E
Electrical Characteristics @ 25
Symbol
Parameter
Collector Cutoff Current
(V
CB
= 60Vdc)
Emitter Cutoff Current
(V
EB
=
5.0Vdc)
Unless Otherwise Specified
Min
---
---
Typ
---
---
Max
100
100
Units
nAdc
nAdc
G
OFF CHARACTERISTICS
I
CBO
I
EBO
H
J
K
DIMENSIONS
ON CHARACTERISTICS
BV
CBO
Collector-base breakdown voltage
(I
C
=100µAdc)
Collector-emitter
voltage (I
C
= 1mAdc)
breakdown
60
---
---
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
BV
CEO
50
---
---
Vdc
BV
EBO
Emitter-base breakdown voltage
(I
E
=100µAdc)
DC Current Gain
(I
C
=-1mAdc, V
CE
=-6.0Vdc)
Collector Saturation Voltage
(I
C
=-50mAdc, I
B
=-5.0mAdc)
Output Capacitance
(V
CB
=10.0Vdc, I
E
=0, f=1.0MHz)
Gain Bandwidth product
(V
CE
=10Vdc, I
E
=1mAdc)
5
---
---
Vdc
h
FE
70
---
700
---
INCHES
MIN
MAX
.071
.087
.045
.053
.083
.096
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.006
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.10
2.45
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.15
.40
NOTE
V
CE(sat)
---
---
0.25
Vdc
Suggested Solder
Pad Layout
0.70
C
ob
---
---
3.5
pF
0.90
f
T
---
80
---
MHz
1.90
mm
h
FE
CLASSIFICATION
Rank
Marking
Range
O
LO
70-140
Y
LY
120-240
GR
LG
200-400
BL
LL
350-700
0.65
0.65
www.mccsemi.com
Revision:
C
1 of 4
2013/09/24

2SC4116-Y-TP-HF Related Products

2SC4116-Y-TP-HF 2SC4116-BL-TP-HF 2SC4116-BL-TP 2SC4116-GR-TP-HF 2SC4116-O-TP-HF 2SC4116-Y-TP 2SC4116-O-TP 2SC4116-GR-TP
Description Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3 Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3 Small Signal Bipolar Transistor, 0.15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli compli compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A 0.15 A
Collector-emitter maximum voltage 50 V 50 V 60 V 50 V 50 V 60 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 350 350 200 70 120 70 200
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level 1 1 1 1 1 1 1 1
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260 260
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
surface mount YES YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10 10 10 10 10
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz 80 MHz
Base Number Matches 1 1 1 1 1 1 1 1
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