RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 1435956858 |
| package instruction | MICROWAVE, X-CXMW-F4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW NOISE, HIGH RELIABILITY |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 5 V |
| Maximum drain current (Abs) (ID) | 0.07 A |
| Maximum drain current (ID) | 0.07 A |
| FET technology | METAL SEMICONDUCTOR |
| highest frequency band | X BAND |
| JESD-30 code | X-CXMW-F4 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 150 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | UNSPECIFIED |
| Package form | MICROWAVE |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 0.27 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | FLAT |
| Terminal location | UNSPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
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