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2SC4117BLTE85L

Description
TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size317KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC4117BLTE85L Overview

TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2SC4117BLTE85L Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)350
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.3 V
Base Number Matches1
2SC4117
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC4117
Audio Frequency General Purpose Amplifier Applications
High voltage: V
CEO
= 120 V
Excellent h
FE
linearity: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
High h
FE:
h
FE
= 200~700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1587
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
120
120
5
100
20
100
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-70
temperature/current/voltage and the significant change in
TOSHIBA
2-2E1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
Weight: 0.006 g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
NF
Test Condition
V
CB
=
120 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
10 mA, I
B
=
1 mA
V
CE
=
6 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
6 V, I
C
=
0.1 mA, f
=
1 kHz,
R
G
=
10 kΩ
Min
200
Typ.
100
3.0
1.0
Max
0.1
0.1
700
0.3
10
V
MHz
pF
dB
Unit
μA
μA
Note: h
FE
classification GR (G): 200~400, BL (L): 350~700
Marking
1
2007-11-01

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Description TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, 2-2E1A, SC-70, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of terminals 3 3 3 3 3 3 3 3 3
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Base Number Matches 1 1 1 1 1 1 1 1 1
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 - -
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE - -
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A - -
Collector-emitter maximum voltage 120 V 120 V 120 V 120 V 120 V 120 V 120 V - -
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - -
Minimum DC current gain (hFE) 350 350 350 200 200 200 200 - -
Number of components 1 1 1 1 1 1 1 - -
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN - -
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER - -
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON - -
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz - -
VCEsat-Max 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V 0.3 V - -

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