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BZX84-A51,235

Description
51V, 0.25W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size448KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BZX84-A51,235 Overview

51V, 0.25W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, PLASTIC PACKAGE-3

BZX84-A51,235 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.25 W
GuidelineAEC-Q101; IEC-60134
Nominal reference voltage51 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum voltage tolerance1%
Working test current2 mA
SO
T2
3
BZX84 series
Voltage regulator diodes
Rev. 5 — 18 September 2013
Product data sheet
1. Product profile
1.1 General description
Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted
Device (SMD) plastic package.
The diodes are available in the normalized E24
1
% (BZX84-A),
2
% (BZX84-B) and
approximately
5
% (BZX84-C) tolerance range. The series includes 37 breakdown
voltages with nominal working voltages from 2.4 V to 75 V.
1.2 Features and benefits
Working voltage range:
nominal 2.4 V to 75 V (E24 range)
Three tolerance series:
1
%,
2
% and
Non-repetitive peak reverse power
approximately
5
%
dissipation:
40 W
AEC-Q101 qualified
Total power dissipation:
250 mW
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
tot
[1]
[2]
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
I
F
= 10 mA
T
amb
25 °C
[1]
[2]
Min
-
-
Typ
-
-
Max
0.9
250
Unit
V
mW
Pulse test: t
p
100
s;  
0.02
Device mounted on a FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
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