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MMBD1204A

Description
Rectifier Diode, 2 Element, 0.2A, Silicon
CategoryDiscrete semiconductor    diode   
File Size258KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

MMBD1204A Overview

Rectifier Diode, 2 Element, 0.2A, Silicon

MMBD1204A Parametric

Parameter NameAttribute value
MakerFairchild
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresULTRA FAST
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.35 W
Certification statusNot Qualified
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
MMBD1201 / 1203 / 1204 / 1205
MMBD1201 / 1203 / 1204 / 1205
CONNECTION DIAGRAMS
3
1201
3
3
1203
3
24
1
2 NC
3
1
3
2
2
1
2
1204
1205
SOT-23
1
MARKING
MMBD1201 24
MMBD1204A 27
MMBD1203 26
MMBD1205A 28
1
2
1
2
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings*
Symbol
W
IV
I
F(AV)
I
FM
I
FRM
I
FSM
T
stg
T
J
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
Value
50
200
600
700
1.0
2.0
-55 to +150
150
Units
V
mA
mA
mA
A
A
°C
°C
Non-repetitive Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
MMBD1201/1203/1204/1205*
350
2.8
357
Units
mW
mW/°C
°C/W
*
Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
2001
Fairchild Semiconductor Corporation
MMBD1200 series, Rev. A1

MMBD1204A Related Products

MMBD1204A MMBD1205A
Description Rectifier Diode, 2 Element, 0.2A, Silicon Rectifier Diode, 2 Element, 0.2A, Silicon
Maker Fairchild Fairchild
package instruction R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Other features ULTRA FAST ULTRA FAST
Configuration COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 2 2
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Maximum output current 0.2 A 0.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.35 W 0.35 W
Certification status Not Qualified Not Qualified
Maximum reverse recovery time 0.004 µs 0.004 µs
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL

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