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2SC4132QT100

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size116KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SC4132QT100 Overview

Transistor

2SC4132QT100 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)120
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
surface mountYES
Base Number Matches1
Power Transistor (120V, 2A)
2SC4132
Features
1) High breakdown voltage. (BV
CEO
= 120V)
2) Low collector output capacitance.
(Typ. 20pF at V
CB
= 10V)
3) High transition frequency. (f
T
= 80MHz)
4) Complements the 2SB1236.
Dimensions
(Unit : mm)
0.5
2SC4132
4.5
1.6
1.5
(1)
(2)
(3)
1.0
2.5
4.0
0.4
0.4
1.5
0.5
1.5
3.0
0.4
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
Packaging specifications and h
FE
Package
Type
h
FE
2SC4132
PQR
Code
Basic ordering unit (pieces)
Taping
T100
1000
h
FE
values are classified as follows:
Item
h
FE
P
82 to 180
Q
120 to 270
R
180 to 390
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
120
120
5
2
Unit
V
V
V
A
A
W
°C
°C
∗1
3
0.5
2
2
150
−55
to +150
1
2
Single pulse Pw = 10ms
When mounted on a 40
×
40
×
0.7mm ceramic board.
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
120
120
5
82
Typ.
80
20
Max.
1
1
0.4
390
Unit
V
V
V
µA
µA
V
MHz
pF
I
C
= 50µA
I
C
= 1mA
I
E
= 50µA
V
CB
= 100V
V
EB
= 4V
I
C
/I
B
= 1A/0.1A
V
CE
/I
C
= 5V/0.1A
V
CE
= 5V , I
E
=
−0.1A
, f = 30MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
Conditions
Measured using pulse current.
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.02 - Rev.D

2SC4132QT100 Related Products

2SC4132QT100 2SC4132PT100 2SC4132RT100 2SC4132T100/Q 2SC4132T100/R 2SC4132T100/P 2SC4132T100
Description Transistor Transistor Transistor 2000mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, MPT3, SC-62, 3 PIN 2000mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, MPT3, SC-62, 3 PIN 2000mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, MPT3, SC-62, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, SC-62, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
package instruction , , , SMALL OUTLINE, R-PSSO-F3 MPT3, SC-62, 3 PIN SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code compli compli compli compli compli compli compli
Maximum collector current (IC) 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Configuration Single Single Single SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 82 180 120 180 82 82
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
surface mount YES YES YES YES YES YES YES
Base Number Matches 1 1 1 1 1 1 1
Is it lead-free? - - - Lead free Lead free Lead free Lead free
Parts packaging code - - - SC-62 SC-62 SC-62 SC-62
Contacts - - - 3 3 3 3
Shell connection - - - COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Collector-emitter maximum voltage - - - 120 V 120 V 120 V 120 V
JESD-30 code - - - R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
JESD-609 code - - - e2 e2 e2 e2
Number of components - - - 1 1 1 1
Number of terminals - - - 3 3 3 3
Package body material - - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - - - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - - - 260 260 260 260
Certification status - - - Not Qualified Not Qualified Not Qualified Not Qualified
Terminal surface - - - TIN COPPER TIN COPPER TIN COPPER TIN COPPER
Terminal form - - - FLAT FLAT FLAT FLAT
Terminal location - - - SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - - - 10 10 10 10
transistor applications - - - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - - - SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) - - - 80 MHz 80 MHz 80 MHz 80 MHz

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