Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3277
DESCRIPTION
·With
TO-3PN package
·High
voltage ,high current
·Fast
switching speed
·Wide
area of safe operation
APPLICATIONS
·400V/10A
switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
10
20
90
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=5mA ;R
BE
=∞
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=6A ;I
B
=1.2A
I
C
=6A ;I
B
=1.2A
V
CB
=400V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1.2A ; V
CE
=5V
I
C
=6A ; V
CE
=5V
I
C
=1.2A ; V
CE
=10V
I
E
=0 ; V
CB
=10V;f=1MHz
15
8
MIN
400
500
7
2SC3277
TYP.
MAX
UNIT
V
V
V
1.0
1.5
10
10
50
V
V
μA
μA
20
120
MHz
pF
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=7A;I
B1
=-I
B2
=1.4A
R
L
=28.6Ω,P
W
=20μs
V
CC
=200V
1.0
2.5
1.0
μs
μs
μs
h
FE-1
Classifications
L
15-30
M
20-40
N
30-50
2
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