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2SC3279-N-AP

Description
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size309KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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2SC3279-N-AP Overview

Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SC3279-N-AP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)300
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
2SC3279-L
2SC3279-M
2SC3279-N
2SC3279-P
NPN Silicon
Epitaxial Transistors
TO-92
A
E
Features
High DC Current Gain and excellent h
FE
Linearity
h
FE(1)
=140-600 (V
CE
=1.0V, I
C
=0.5A)
h
FE(2)
=70 (Min.), 200 (Typ.) (V
CE
=1.0V, I
C
=2.0A)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Halogen
free available upon request by adding suffix "-HF"
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - DC
Pulsed
(1)
Base Current
Collector power dissipation
Junction Temperature
Storage Temperature
Parameter
Collector-Emitter Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Emitter Voltage
(I
E
=1.0mAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=30Vdc,I
E
=0)
Emitter Cutoff Current
(V
EB
=6.0Vdc, I
C
=0)
(2)
Maximum Ratings
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Symbol
Rating
10
30
30
6.0
2.0
5.0
0.2
750
-55 to +150
-55 to +150
Min
10
6.0
---
---
Typ
---
---
---
---
Max
---
---
0.1
0.1
Unit
V
V
V
V
A
A
mW
O
C
O
C
Units
Vdc
Vdc
uAdc
uAdc
E
C
B
E
B
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
D
C
B
ON CHARACTERISTICS
DC Current Gain
(I
C
=0.5Adc, V
CE
=1.0Vdc)
140
---
600
h
FE(2)
DC Current Gain
(I
C
=2.0Adc, V
CE
=1.0Vdc)
70
200
---
V
CE(sat)
Collector Saturation Voltage
(I
C
=2.0Adc, I
B
=50mAdc)
---
0.2
0.5
V
BE
Base Saturation Voltage
(I
C
=2.0Adc, V
CE
=1.0Vdc)
---
0.86
1.5
f
T
Transition Frequency
(V
CE
=1.0Vdc, I
C
=0.5Adc)
100
150
---
C
ob
Collector Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=1.0MHz)
---
27
---
(1) Pulse Width=10 ms (Max.), Duty Cycle=30% (Max.)
(2) h
FE(1)
Classification L: 140-240, M: 200-330, N: 300-450, P: 420-600
h
FE(1)
---
---
Vdc
Vdc
MHz
pF
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
.173
G
STRAIGHT LEAD BENT LEAD
BULK PACK
AMMO PACK
DIMENSIONS
MM
MAX
.185
.185
---
.020
.145
.105
.220
MIN
4.45
4.45
12.70
0.41
3.43
2.42
4.40
MAX
4.70
4.70
---
0.63
3.68
2.67
5.60
NOTE
Straight Lead
Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
www.mccsemi.com
Revision:
D
1 of 3
2013/01/01

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