Ordering number : EN3260B
2SB1231 / 2SD1841
SANYO Semiconductors
DATA SHEET
2SB1231 / 2SD1841
Applications
•
2SB1231 : PNP Epitaxial Planar Silicon Transistor
2SD1841 : NPN Triple Diffused Planar Silicon Transistor
100V / 25A Switching
Applications
Motor drivers, relay drivers, converters and other general high-current switching applications.
Features
•
•
Large current capacity and wide ASO.
Low saturation voltage.
( ) : 2SB1231
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)110
(-
-)100
(-
-)6
(--)25
(--)40
(-
-)8
3.0
120
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31407DA TI IM TC-00000575 / D1003TN(KT) / 92098HA(KT) / 71095TS / 7190MH, TA (KOTO) No.3260-1/5
2SB1231 / 2SD1841
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Conditions
VCB=(--)100V, IE=0A
VEB=(--)5V, IC=0A
VCE=(--)2V, IC=(-
-)2.5A
VCE=(--)2V, IC=(-
-)10A
IC=(--)10A, IB=(--)1A
IC=(--)10A, IB=(--)1A
IC=(--)1mA, IE=0A
IC=(--)5mA, RBE=∞
IE=(-
-)1mA, IC=0A
(-
-)110
(--)100
(--)6
50*
20
(--)0.8
(--)1.5
V
V
V
V
V
Ratings
min
typ
max
(--)0.1
(--)0.1
140*
Unit
mA
mA
*
: The 2SB1231 / 2SD1841 is classified by 2.5A hFE as follows :
Rank
P
Q
hFE
50 to 100
70 to 140
Package Dimensions
unit : mm (typ)
7503-003
15.6
14.0
4.8
3.2
2.0
2.6
3.5
2.0
1.6
1.3
20.0
15.0
20.0
1.2
1.0
0.6
1
2 3
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
5.45
5.45
1.4
--28
IC -- VCE
2SB1231
--5.0A
--3
.0A
28
IC -- VCE
2SD1841
5.0A
3.0
A
--24
.
--2
0A
--1.0A
Collector Current, IC -- A
24
2.0
A
A
1.0
Collector Current, IC -- A
0.5A
0.3A
--20
20
--16
--0.5A
--0.3A
--0.2A
16
--12
12
0.2A
0.1A
--8
--0.1A
8
--4
0
0
--1
--2
--3
4
IB=0A
--4
--5
ITR09393
0
0
1
2
3
IB=0A
4
5
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
ITR09394
No.3260-2/5
2SB1231 / 2SD1841
--28
IC -- VBE(ON)
Ta
=-
-4
0
°
C
2SB1231
VCE=
--2V
28
IC -- VBE(ON)
--40
°
C
2SD1841
VCE=2V
Collector Current, IC -- A
Collector Current, IC -- A
Ta=
25
°
C
--24
--16
16
--12
12
--8
8
--4
0
0
--0.4
--0.8
--1.2
--1.6
--2.0
--2.4
--2.8
4
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Base-to-Emitter ON Voltage, VBE(ON) -- V
3
2
ITR09395
3
2
Base-to-Emitter ON Voltage, VBE(ON) -- V
12
--20
°
C
25
°
C
0
12
24
20
0
°
C
ITR09396
hFE -- IC
Ta=120
°
C
25
°
C
hFE -- IC
Ta=120
°
C
2SB1231
VCE=
--2V
2SD1841
VCE=2V
100
100
25
°
C
DC Current Gain, hFE
7
5
3
2
10
7
5
3
2
5 7 --0.1
2
DC Current Gain, hFE
--40
°
C
7
5
3
2
10
7
5
3
2
--40
°
C
3
5
7 --1.0
2
3
5
7 --10
2
3
5
5 7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
Collector Current, IC -- A
5
3
ITR09397
5
3
VCE(sat) -- IC
Collector Current, IC -- A
ITR09398
VCE(sat) -- IC
2SB1231
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
--1.0
7
5
3
2
--0.1
7
5
3
2
5 7 --0.1
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SD1841
IC / IB=10
2
1.0
7
5
3
2
0.1
7
5
3
2
°
C
25
20
°
C
Ta=1
C
--40
°
3
5
7 --1.0
2
3
5 7 --10
2
3
5
Ta=120
°
C
25
°
C
--40
°
C
5 7 0.1
2
3
5 7 1.0
2
3
5
7 10
2
3
5
Collector Current, IC -- A
5
3
ITR09399
5
3
VCE(sat) -- IC
Collector Current, IC -- A
ITR09400
VCE(sat) -- IC
2SB1231
Ta=25
°
C
2SD1841
Ta=25
°
C
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
--1.0
7
5
3
2
--0.1
7
5
3
2
5
7 --0.1
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
1.0
7
5
3
2
0.1
7
5
3
2
5 7 0.1
=20
IC / IB
IC / IB=20
0
I C / I B=1
2
3
5 7 1.0
2
3
5
7 10
2
3
5
10
I =
IC / B
3
5 7 --1.0
2
3
5
7 --10
2
3
5
Collector Current, IC -- A
ITR09401
Collector Current, IC -- A
ITR09402
No.3260-3/5
2SB1231 / 2SD1841
3
2
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SB1231
IC / IB=10
3
2
VBE(sat) -- IC
2SD1841
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
--1.0
7
Ta=
--40
°
C
25
°
C
1.0
7
Ta=
--40
°
C
25
°
C
5
120
°
C
5
120
°
C
3
2
3
2
--0.1
5 7 --0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
0.1
5 7 0.1
2
3
5
7 1.0
2
3
5 7 10
2
3
5
Forward Bias A S O
5
3
2
Collector Current, IC -- A
ITR09403
Collector Current, IC -- A
3.5
ITR09404
PC -- Ta
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
5
Collector Dissipation, PC -- W
ICP=40A
IC=25A
Collector Current, IC -- A
0
µ
0m
s
s
10
1ms
m
s
50
20
10
0
µ
s
2SB1231 / 2SD1841
3.0
2.5
10
2SB1231 / 2SD1841
Tc=25
°
C
Single Pulse
(For PNP minus sign is omitted.)
7 1.0
2
3
5
7 10
2
3
5
Collector-to-Emitter Voltage, VCE
140
PC -- Tc
DC
0m
2.0
No
op
s
7 100
2
-- V
ITR09407
he
a
er
on
ati
2SB1231 / 2SD1841
ts
1.5
in
k
1.0
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
ITR09405
120
Collector Dissipation, PC -- W
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
ITR09406
PS No.3260-4/5
2SB1231 / 2SD1841
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2007. Specifications and information herein are subject
to change without notice.
No.3260-5/5
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