DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK2552C
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK2552C contains a diode and high resistivity
between its gates and sources, for achieving short stability
time during power-on. In addition, because of its compact
1.6 ±0.1
0.8 ±0.1
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
package and low noise, the 2SK2552C is especially suitable
for compact ECMs for audio or mobile devices such as cell-
phones.
3
0 to 0.1
2
0.2
+0.1
–0
0.5
TYP.
0.5
TYP.
1
0.6
TYP.
0.75 ±0.05
FEATURES
•
Low noise:
−108.5
dB TYP. (V
DD
= 2.0 V, C = 5 pF, R
L
= 2.2 kΩ)
•
Containing a diode and high resistivity, short stability time is
achieved during power-on.
•
Small package: SC-75 (USM)
1.0 TYP.
1.6 ±0.1
ORDERING INFORMATION
PART NUMBER
2SK2552C
PACKAGE
SC-75 (USM)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
=
−1.0
V)
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
DSX
V
GDO
I
D
I
G
P
T
T
j
T
stg
20
−20
10
10
100
125
−55
to
+125
V
V
mA
mA
mW
°C
°C
EQUIVALENT CIRCUIT
2
3
1
1: Source
2: Drain
3: Gate
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18893EJ1V0DS00 (1st edition)
Date Published August 2007 NS
Printed in Japan
2007
2SK2552C
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF POWER DISSIPATION
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
800
600
400
200
0
0
2
4
6
8
10
V
GS
= 0.2 V
−0.2
V
−0.3
V
0.1 V
dT - Derating Factor - %
I
D
- Drain Current -
μ
A
0V
−0.1
V
T
A
- Ambient Temperature - °C
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
I
GS
- Gate to Source Current -
μ
A
1600
40
30
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
DS
= 2.0 V
1400
I
D
- Drain Current -
μ
A
20
10
−0.8 −0.6 −0.4 −0.2
0 0.2
−10
−20
−30
−40
0.4 0.6 0.8
1200
1000
800
600
400
200
0
-0.8 -0.6 -0.4 -0.2
0
0.2 0.4 0.6 0.8
1
V
GS
- Gate to Source Voltage - V
V
GS
- Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
10
| y
fs
| - Forward Transfer Admittance - mS
V
GS(off)
- Gate Cut-off Voltage - V
V
GS
= 0 V
f = 1.0 MHz
V
DS
= 2.0 V
C
iss
- Input Capacitance - pF
| y
fs
|
1
V
GS(off)
1
1
10
100
0.1
10
100
1000
V
DS
- Drain to Source Voltage - V
I
DSS
- Zero Gate Voltage Drain Current -
μ
A
Data Sheet D18893EJ1V0DS
3
2SK2552C
•
The information in this document is current as of August, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
•
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written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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•
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•
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