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2SC3295-B(TE85L)

Description
2SC3295-B(TE85L)
CategoryDiscrete semiconductor    The transistor   
File Size193KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SC3295-B(TE85L) Overview

2SC3295-B(TE85L)

2SC3295-B(TE85L) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
2SC3295
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC3295
Audio Frequency Amplifier Applications
Switching Applications
High h
FE:
h
FE
= 600~3600
High voltage: V
CEO
= 50 V
High collector current: I
C
= 150 mA (max)
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
50
5
150
30
150
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-3F1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
NF (1)
Noise figure
NF (2)
Test Condition
V
CB
=
50 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
10 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
6 V, I
C
=
0.1 mA, f
=
100 Hz,
R
g
=
10 kΩ
V
CE
=
6 V, I
C
=
0.1 mA, f
=
1 kHz,
R
g
=
10 kΩ
Min
600
100
Typ.
0.12
250
3.5
0.5
0.3
Max
0.1
0.1
3600
0.25
dB
V
MHz
pF
Unit
μA
μA
Note: h
FE
classification A: 600~1800, B: 1200~3600
Marking
1
2007-11-01

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2SC3295-B(TE85L) 2SC3295-A(TE85L)
Description 2SC3295-B(TE85L) 2SC3295-A(TE85L)
Reach Compliance Code unknow unknow
Base Number Matches 1 1
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