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2SK669-AP

Description
100mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size99KB,1 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SK669-AP Overview

100mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

2SK669-AP Parametric

Parameter NameAttribute value
Objectid1412302046
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
Other featuresLOW NOISE
ConfigurationSINGLE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)0.1 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceNOT SPECIFIED
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
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