2SK1806E datasheet, PDF - EEWORLD Datasheet

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2SK1806E: DescriptionSmall Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, DP3, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size160KB，3 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SK1806E Overview

Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, DP3, 3 PIN

2SK1806E Parametric

Parameter Name	Attribute value
Objectid	1938019458
Parts packaging code	DIP
package instruction	IN-LINE, R-PDIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Configuration	SINGLE
Maximum drain current (ID)	0.02 A
Maximum drain-source on-resistance	250 Ω
FET technology	JUNCTION
JESD-30 code	R-PDIP-T3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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Ordering number : EN 4114

N-Channel Junction Silicon FET

2SK1806

Low-Frequency General-Purpose

Amp Applications Impedance

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2SK1806E Related Products

	2SK1806E	2SK1806D	2SK1806C	2SK1806
Description	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, DP3, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, DP3, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, DP3, 3 PIN	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, DP3, 3 PIN
Objectid	1938019458	1938019457	1938019456	1515340973
Parts packaging code	DIP	DIP	DIP	DIP
package instruction	IN-LINE, R-PDIP-T3	IN-LINE, R-PDIP-T3	IN-LINE, R-PDIP-T3	IN-LINE, R-PDIP-T3
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Maximum drain current (ID)	0.02 A	0.02 A	0.02 A	0.02 A
Maximum drain-source on-resistance	250 Ω	250 Ω	250 Ω	250 Ω
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION
JESD-30 code	R-PDIP-T3	R-PDIP-T3	R-PDIP-T3	R-PDIP-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.25 W	0.25 W	0.25 W	0.25 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maximum operating temperature	150 °C	150 °C	150 °C	-

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