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2SC3787-R

Description
0.14A, 160V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size41KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC3787-R Overview

0.14A, 160V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN

2SC3787-R Parametric

Parameter NameAttribute value
Objectid1546485409
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)0.14 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)10 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Ordering number:ENN2089B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1477/2SC3787
160V/140mA Switching Applications
Applications
· Predrivers for 100W power amplifiers.
Package Dimensions
unit:mm
2042B
[2SA1477/2SC3787]
8.0
1.0
4.0
1.0
Features
· Adoption of FBET process.
· Excellent linearity of h
FE
.
· Small C
ob
.
· Plastic-convered heat sink facilitating high-density
mounting (TO-126ML package).
1.4
3.3
3.0
1.6
0.8
1.5
3.0
0.8
0.75
7.5
15.5
11.0
0.7
1
2
3
( ) : 2SA1477
4.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.7
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
(–)180
(–)160
(–)5
(–)140
(–)200
1.3
Unit
V
V
V
mA
mA
W
W
Tc=25˚C
10
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
R
100 to 200
S
140 to 280
T
200 to 400
VCB=(–)120V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)10mA
100
150
Conditions
Ratings
min
typ
max
(–)100
(–)100
400
MHz
Unit
nA
nA
*: The 2SA1477/2SC3787 are classified by 10mA h
FE
as follows :
Rank
hFE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/10996TS (KOTO) 8-8491/5197TA, TS No.2089-1/5

2SC3787-R Related Products

2SC3787-R 2SC3787-S 2SC3787-T 2SA1477-R 2SA1477-S 2SA1477-T
Description 0.14A, 160V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN Power Bipolar Transistor, 0.14A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN 0.14A, 160V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN 0.14A, 160V, PNP, Si, POWER TRANSISTOR, TO-126ML, 3 PIN Power Bipolar Transistor, 0.14A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN Power Bipolar Transistor, 0.14A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-126ML, 3 PIN
Parts packaging code SIP SIP SIP SIP SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 TO-126ML, 3 PIN FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknow
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 0.14 A 0.14 A 0.14 A 0.14 A 0.14 A 0.14 A
Collector-emitter maximum voltage 160 V 160 V 160 V 160 V 160 V 160 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 140 200 100 140 200
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN PNP PNP PNP
Maximum power dissipation(Abs) 10 W 10 W 10 W 10 W 10 W 10 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
Objectid 1546485409 1991532206 1546485411 1546485389 1991532186 -
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