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2SC3787S

Description
0.14A, 160V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size134KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SC3787S Overview

0.14A, 160V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN

2SC3787S Parametric

Parameter NameAttribute value
Objectid1546485410
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)0.14 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)140
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)10 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Ordering number:EN2089B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1477/2SC3787
160V/140mA Switching Applications
Applications
· Predrivers for 100W power amplifiers.
Package Dimensions
unit:mm
2042B
[2SA1477/2SC3787]
Features
· Adoption of FBET process.
· Excellent linearity of h
FE
.
· Small C
ob
.
· Plastic-convered heat sink facilitating high-density
mounting (TO-126ML package).
1 : Emitter
2 : Collector
3 : Base
( ) : 2SA1477
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Conditions
SANYO : TO-126ML
Ratings
(–)180
(–)160
(–)5
(–)140
(–)200
1.3
Unit
V
V
V
mA
mA
W
W
Tc=25˚C
Tj
Tstg
10
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Rise Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB=(–)120V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)10mA
VCB=(–)10V, f=1MHz
IC=(–)50mA, IB=(–)5mA
100
150
(4.0)
3.0
(–140)
70
IC=(–)50mA, IB=(–)5mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)10µA, IC=0
ton
tstg
tf
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
(–)180
(–)160
(–)5
0.1
0.5
0.1
(–400)
300
1.2
Conditions
Ratings
min
typ
max
(–)100
(–)100
400
MHz
pF
pF
mV
mV
V
V
V
V
µs
µs
µs
Unit
nA
nA
*: The 2SA1477/2SC3787 are classified by 10mA h
FE
as follows :
100
R
200
140
S
280
200
T
400
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/10996TS (KOTO) 8-8491/5197TA, TS No.2089-1/4

2SC3787S Related Products

2SC3787S 2SC3787R 2SC3787T
Description 0.14A, 160V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN 0.14A, 160V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN 0.14A, 160V, NPN, Si, POWER TRANSISTOR, TO-126ML, 3 PIN
Objectid 1546485410 1546485409 1546485411
Parts packaging code SIP SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
Shell connection ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 0.14 A 0.14 A 0.14 A
Collector-emitter maximum voltage 160 V 160 V 160 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 140 100 200
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 10 W 10 W 10 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz
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