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2SD2157AR

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size113KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

2SD2157AR Overview

Transistor

2SD2157AR Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)4 A
ConfigurationSingle
Minimum DC current gain (hFE)1000
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
surface mountNO
Base Number Matches1

2SD2157AR Related Products

2SD2157AR 2SD2157AP 2SD2157AQ 2SD2157P 2SD2157R 2SD2157Q
Description Transistor Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3 Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3 Transistor Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3
package instruction , FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 , FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow unknow unknow unknow unknow
Maximum collector current (IC) 4 A 4 A 4 A 4 A 4 A 4 A
Configuration Single DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Single DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 1000 4000 2000 4000 1000 2000
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 2 W 2 W 2 W 2 W 2 W 2 W
surface mount NO NO NO NO NO NO
Base Number Matches 1 1 1 1 1 1
Parts packaging code - SFM SFM SFM - SFM
Contacts - 3 3 3 - 3
ECCN code - EAR99 EAR99 EAR99 - EAR99
Shell connection - ISOLATED ISOLATED ISOLATED - ISOLATED
Collector-emitter maximum voltage - 80 V 80 V 60 V - 60 V
JESD-30 code - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3
Number of components - 1 1 1 - 1
Number of terminals - 3 3 3 - 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
Package form - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
Certification status - Not Qualified Not Qualified Not Qualified - Not Qualified
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE - SINGLE
transistor applications - SWITCHING SWITCHING SWITCHING - SWITCHING
Transistor component materials - SILICON SILICON SILICON - SILICON
Nominal transition frequency (fT) - 20 MHz 20 MHz 20 MHz - 20 MHz

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