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2SC4727-T

Description
8A, 20V, NPN, Si, POWER TRANSISTOR, FLP-3
CategoryDiscrete semiconductor    The transistor   
File Size31KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC4727-T Overview

8A, 20V, NPN, Si, POWER TRANSISTOR, FLP-3

2SC4727-T Parametric

Parameter NameAttribute value
Objectid1481977565
Parts packaging codeFLIP-CHIP
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)8 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Ordering number:ENN3871
NPN Epitaxial Planar Silicon Transistor
2SC4727
20V/8A Switching Applications
Features
· Adoption of MBIT process.
· Low saturation voltage.
· High-speed switching.
· Large current capacity.
· It is possible to make appliances more compact
because its height on board is 9.5mm.
· Effective in automatic inserting and counting stocked
amount because of being provided for radial taping.
Package Dimensions
unit:mm
2084B
[2SC4727]
10.5
1.9
4.5
1.2
2.6
1.4
1.2
7.5
1.6
0.5
0.5
1
2
3
1.0
8.5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
2.5
2.5
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
Ratings
30
20
5
8
12
1.5
1.5
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=20V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=6A
VCE=2V, IC=500mA
100*
70
250
MHz
Conditions
Ratings
min
typ
max
1
1
400*
Unit
µA
µA
* : The 2SC4727 is classified by 500mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33005TN (PC)/12099HA (KT)/5732MH (KOTO) No.3871–1/4

2SC4727-T Related Products

2SC4727-T 2SC4727-R 2SC4727-S
Description 8A, 20V, NPN, Si, POWER TRANSISTOR, FLP-3 Power Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FLP-3 Power Bipolar Transistor, 8A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FLP-3
Objectid 1481977565 1741011514 1741011515
Parts packaging code FLIP-CHIP FLIP-CHIP FLIP-CHIP
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 8 A 8 A 8 A
Collector-emitter maximum voltage 20 V 20 V 20 V
Configuration SINGLE SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 200 100 140
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 1.5 W 1.5 W 1.5 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
ECCN code - EAR99 EAR99

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