Power Bipolar Transistor, 2.5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
| Parameter Name | Attribute value |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknow |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 2.5 A |
| Collector-emitter maximum voltage | 700 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum DC current gain (hFE) | 3.5 |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 3 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 2 MHz |
| Base Number Matches | 1 |
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