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2SD1847

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size229KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SD1847 Overview

Transistor

2SD1847 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1847
DESCRIPTION
·Collector-Base
Breakdown Voltage-
: V
CBO
= 1500V (Min.)
·High
Switching Speed
·Built-in
Damper Diode
APPLICATIONS
·Designed
for horizontal deflection output applications
.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector- Base Voltage
V
CES
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
I
CM
Collector Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
1500
V
1500
V
7
V
5
A
15
A
2
A
3
W
Collector Current-Peak
I
B
B
Base Current- Continuous
Collector Power Dissipation
@ T
a
=25℃
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
100
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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