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2SD1114(K)

Description
6A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size62KB,3 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SD1114(K) Overview

6A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB

2SD1114(K) Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage300 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)500
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2SD1114(K) Related Products

2SD1114(K)
Description 6A, 300V, NPN, Si, POWER TRANSISTOR, TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compli
ECCN code EAR99
Shell connection COLLECTOR
Maximum collector current (IC) 6 A
Collector-emitter maximum voltage 300 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 500
JEDEC-95 code TO-220AB
JESD-30 code R-PSFM-T3
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Polarity/channel type NPN
Certification status Not Qualified
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1

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