Ordering number : EN2253B
2SA1478 / 2SC3788
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1478 / 2SC3788
Features
•
•
•
High-Definition CRT Display
Video Output Applications
High breakdown voltage : VCEO
≥200V.
Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP).
Adoption of FBET process.
Specifications
( ) : 2SA1478
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(-
-)200
(-
-)200
(-
-)5
(-
-)100
(-
-)200
1.3
5
150
--55 to +150
Unit
V
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=(--)150V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)10V, IC=(--)10mA
40*
Ratings
min
typ
max
(--)0.1
(--)0.1
320*
Unit
µA
µA
Continued on next page.
*
: The 2SA1478 / 2SC3788 are classified by 10mA hFE as follws:
Rank
C
D
E
hFE
40 to 80
60 to 120
100 to 200
F
160 to 320
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53007CB TI IM TC-00000705 / O3103TN(KT) /71598HA (KT)/3247TA, TS No.2253-1/5
2SA1478 / 2SC3788
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Reverce Trancefer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
fT
Cob
Cre
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Conditions
VCE=(--)30V, IC=--10mA
VCB=(--)30V, f=1MHz
VCB=(--)30V, f=1MHz
IC=(--)20mA, IB=(--)2mA
IC=(--)20mA, IB=(--)2mA
IC=(--)10µA, IE=0A
IC=(--)1mA, RBE=∞
IE=(-
-)10µA, IC=0A
(--)200
(--)200
(--)5
Ratings
min
typ
150
(2.6)1.7
(1.7)1.2
(--)0.6
(--)1.0
max
Unit
MHz
pF
pF
V
V
V
V
V
Package Dimensions
unit : mm (typ)
7516A-002
8.0
4.0
1.0
3.6
1.0
3.3
1.4
1
2
3
15.5
1.6
0.8
0.8
0.75
1.5
3.0
7.5
11.0
0.7
2.4
4.8
1.7
--
8
--
7
Collector Current, IC -- mA
IC -- VCE
2SA1478
3.0
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
20
18
IC -- VCE
2SC3788
160
µ
A
140
µ
A
120
µ
A
100
µ
A
80µA
--50µA
Collector Current, IC -- mA
16
14
12
10
8
6
4
--
6
--
5
--
4
--40µA
--30µA
--20
µ
A
60
µ
A
40µA
--
3
--10
µ
A
--
2
2
20µA
--
1
--
1
0
IB=0
µ
A
--
2
--
3
--
4
--
5
--
6
--
7
--
8
--
9
--
10
Collector-to-Emitter Voltage, VCE -- V
ITR03743
0
IB=0
µA
0
1
2
3
4
5
6
7
8
9
10
Collector-to-Emitter Voltage, VCE -- V
ITR03744
No.2253-2/5
2SA1478 / 2SC3788
--
10
IC -- VCE
2SA1478
10
9
IC -- VCE
2SC3788
80
µ
A
70
µ
A
60
µ
A
Collector Current, IC -- mA
Collector Current, IC -- mA
--
8
--50
µ
A
8
7
6
5
4
3
2
--
6
--40
µ
A
--30
µ
A
50
µ
A
40
µ
A
30
µ
A
20
µ
A
--
4
--20
µ
A
--
2
--10
µ
A
10
µ
A
1
0
0
0
IB=0
µ
A
--
20
--
40
--
60
--
80
--
100
Collector-to-Emitter Voltage, VCE -- V
ITR03745
IB=0
µ
A
0
10
20
30
40
50
60
70
80
90
100
Collector-to-Emitter Voltage, VCE -- V
ITR03746
120
--
120
--
100
IC -- VBE
2SA1478
VCE=10V
IC -- VBE
2SC3788
VCE=10V
100
Collector Current, IC -- mA
Collector Current, IC -- mA
--25
°
C
--
60
--
40
--
20
0
60
40
20
0
--
0.2
--
0.4
--
0.6
--
0.8
Base-to-Emitter Voltage, VBE -- V
--
1.0
ITR03747
0
0
0.2
0.4
0.6
0.8
--25
°
C
25
°
C
25
°
C
--
80
Ta=75
°
C
80
Ta=75
°
C
1.0
ITR03748
1000
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
5
hFE -- IC
2SA1478
VCE=10V
3
2
2SC3788
VCE=10V
Ta=75
°C
DC Current Gain, hFE
DC Current Gain, hFE
3
2
Ta=75
°C
25
°
C
100
7
5
3
2
25
°
C
100
7
5
3
2
--25
°
C
--25
°
C
10
5
7
--
1.0
2
2
5
3
--
10
Collector Current, IC -- mA
3
5
7
7
--
100
2
10
5
7 1.0
2
3
5
7 10
2
3
5
ITR03749
1000
7
5
f T -- IC
Collector Current, IC -- mA
7 100
2
ITR03750
f T -- IC
Gain-Bandwidth Product, f T -- MHz
Gain-Bandwidth Product, f T -- MHz
3
2
2SA1478
VCE=30V
5
3
2
2SC3788
VCE=30V
100
7
5
3
2
100
7
5
3
2
10
7
5
5
7
--
1.0
2
2
3
5
--
10
Collector Current, IC -- mA
3
5
7
7
--
100
2
10
5
7 1.0
2
3
5
7
10
2
3
5
ITR03751
Collector Current, IC -- mA
7 100
2
ITR03752
No.2253-3/5
2SA1478 / 2SC3788
2
Cob -- VCB
2SA1478
f=1MHz
2
Cob -- VCB
2SC3788
f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
5
7
2
3
5 7
--
100
2
--
10
Collector-to-Base Voltage, VCB -- V
ITR03753
2
3
5
7
10
7
5
10
7
5
3
2
3
2
1.0
7
5
1.0
7
--
1.0
5
5
7 1.0
2
3
5
7
10
2
3
5
2
Cre -- VCB
Collector-to-Base Voltage, VCB -- V
2
7 100
2
ITR03754
Cre -- VCB
Reverce Transfer Capacitance, Cre -- pF
Reverce Transfer Capacitance, Cre -- pF
2SA1478
f=1MHz
2SC3788
f=1MHz
10
7
5
10
7
5
3
2
3
2
1.0
7
5
5
7
1.0
7
5
5
7 1.0
2
3
5
7 10
2
3
5
7 100
2
V
ITR03756
--
1.0
2
3
5 7
--
100
2
--
10
Collector-to-Base Voltage, VCB -- V
ITR03755
7
2
3
5
3
2
VCE(sat) -- IC
Collector-to-Base Voltage, VCB --
1.0
7
VCE(sat) -- IC
2SA1478
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SC3788
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
7
2
2
3
5
--
10
Collector Current, IC -- mA
3
5
7
7
2
5
--
1.0
7
5
3
2
3
2
0.1
7
5
--
0.1
7
5
--
1.0
--
100
3
5
7
1.0
2
3
5
7
10
2
3
5
ITR03757
10
--
10
7
VBE(sat) -- IC
Collector Current, IC -- mA
100
ITR03758
7
VBE(sat) -- IC
2SA1478
IC / IB=10
7
2SC3788
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
7
2
2
3
5
--
10
Collector Current, IC -- mA
3
5
7
7
--
100
2
5
5
3
2
3
2
--
1.0
7
5
1.0
7
5
3
--
1.0
3
5
7 1.0
2
3
5
7
10
2
3
5
ITR03759
Collector Current, IC -- mA
7 100
ITR03760
No.2253-4/5
2SA1478 / 2SC3788
3
2
ASO
ICP=200mA
IC=100mA
DC
2SA1478 / 2SC3788
Collector Dissipation, PC -- W
s
0
µ
50
s
1m
ms
10
6
PC -- Ta
2SA1478 / 2SC3788
5
Collector Current, IC -- mA
100
7
5
3
2
10
7
5
3
2
5
op
era
op
er
ati
o
tio
(Tc=
n
n
(T
25
°
C
a=
25
)
C)
DC
4
Id
e
3
al
ra
d
iat
io
n
2
1.3
1
No he
at sink
100
120
140
160
(For PNP, minus sign is omitted.)
7
10
2
3
5
7
100
2
3
5
0
0
20
40
60
80
Collector-to-Emitter Voltage, VCE -- V
ITR03761
Ambient Temperature, Ta --
°
C
ITR03762
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2007. Specifications and information herein are subject
to change without notice.
PS No.2253-5/5
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