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2SD1304TMG

Description
Small Signal Bipolar Transistor, 0.1A I(C), 17V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size275KB,6 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric View All

2SD1304TMG Overview

Small Signal Bipolar Transistor, 0.1A I(C), 17V V(BR)CEO, 1-Element, NPN, Silicon

2SD1304TMG Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage17 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
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