2SD1115(K)
Silicon NPN Triple Diffused
Application
High voltage switching, igniter
Outline
TO-220AB
2
1
1. Base
2. Collector
(Flange)
3. Emitter
1
2 3
4.5 kΩ
(Typ)
250
Ω
(Typ)
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
Tj
Tstg
1
Ratings
400
300
7
3
6
40
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SD1115(K)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Turn off time
Note:
1. Pulse test.
Symbol
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CEO
h
FE
V
CE(sat)
V
BE(sat)
t
on
t
off
Min
400
300
7
—
500
—
—
—
—
Typ
—
—
—
—
—
—
—
1.0
22
Max
—
—
—
100
—
1.5
2.0
—
—
V
V
µs
µs
I
C
= 2 A, I
B1
= –I
B2
= 20 mA
Unit
V
V
V
µA
Test conditions
I
C
= 0.1 mA, I
E
= 0
I
C
= 2 A, PW = 50 µs,
f = 50 Hz, L = 10 mH
I
E
= 50 mA, I
C
= 0
V
CE
= 300 V, R
BE
=
∞
V
CE
= 2 V, I
C
= 2 A*
1
I
C
= 2 A, I
B
= 20 mA*
1
Maximum Collector Dissipation Curve
60
Collector power dissipation Pc (W)
40
20
0
50
100
Case temperature T
C
(°C)
Area of Safe Operation
10
3
i
C (peak)
I
C (max)
150
Ta = 25°C
hot
)
1s
t
5
°
C
ms
sho
=2
=1
s1
(T
C
PW
0m
tion
=1
era
Op
DC
PW
Collector current I
C
(A)
1.0
0.3
0.1
0.03
0.01
0.003
0.005
0.5 1.0 2
5 10 20 50 100200 500
Collector to emitter voltage V
CE
(V)
2
2SD1115(K)
Typical Output Characteristics
5
T
C
= 25°C
Collector current I
C
(A)
4
1.0
0.8
0.6
0.4
3
2
0.2 mA
1
I
B
= 0
0
1
2
3
4
5
Collector to emitter voltage V
CE
(V)
DC Current Transfer Ratio
vs. Collector Current
10,000
DC current transfer ratio h
FE
5,000
2,000
1,000
500
200
100
0.1
T
C
=
75
°
C
25
–2
5
V
CE
= 2 V
Pulse
0.2
0.5 1.0
2
5
Collector current I
C
(A)
10
Collector to emitter saturation voltage V
CE (sat)
(V)
Base to emitter saturation voltage V
BE (sat)
(V)
Saturation Voltage vs. Collector Current
10
5
l
C
= 100 l
B
T
C
= 25°C
Pulse
V
BE (sat)
2
1.0
0.5
V
CE (sat)
0.2
0.1
0.1
0.2
0.5 1.0
2
5
Collector current I
C
(A)
10
3
2SD1115(K)
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of this document without Hitachi’s permission.
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other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
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APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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4
Embedded System
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