Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Objectid | 1536742763 |
| package instruction | , |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 0.5 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 1.5 W |
| surface mount | YES |