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2SK848

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size310KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SK848 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

2SK848 Parametric

Parameter NameAttribute value
Objectid1536742763
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)0.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.5 W
surface mountYES

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