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2SC4729S

Description
TRANSISTOR,BJT,NPN,50V V(BR)CEO,8A I(C),SIP
CategoryDiscrete semiconductor    The transistor   
File Size45KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SC4729S Overview

TRANSISTOR,BJT,NPN,50V V(BR)CEO,8A I(C),SIP

2SC4729S Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)8 A
ConfigurationSingle
Minimum DC current gain (hFE)140
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
surface mountNO
Base Number Matches1
Ordering number:ENN3877
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1825/2SC4729
50V/8A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Package Dimensions
unit:mm
2084B
[2SA1825/2SC4729]
1.9
4.5
1.2
Features
· Low collector-to-emitter saturation voltage.
· High Gain-Bandwidth Product.
· Excellent linearity of DC Current Gain.
· Fast switching speed.
10.5
2.6
1.4
1.2
7.5
1.0
8.5
1.6
0.5
1
2
3
0.5
( ) : 2SA1825
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
2.5
2.5
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
Ratings
(–)60
(–)50
(–)6
(–)8
(–)12
(–)2
1.5
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)0.5A
VCE=(–)2V, IC=(–)6A
VCE=(–)5V, IC=(–)1A
VCB=(–)10V, f=1MHz
100*
35
(130)
180
(95)65
MHz
MHz
pF
Conditions
Ratings
min
typ
max
(–)1
(–)1
400*
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82003TN (KT)/91098HA (KT)/D051MH (KOTO) No.3877–1/4

2SC4729S Related Products

2SC4729S 2SA1825R 2SA1825S 2SA1825T
Description TRANSISTOR,BJT,NPN,50V V(BR)CEO,8A I(C),SIP TRANSISTOR,BJT,PNP,50V V(BR)CEO,8A I(C),SIP TRANSISTOR,BJT,PNP,50V V(BR)CEO,8A I(C),SIP TRANSISTOR,BJT,PNP,50V V(BR)CEO,8A I(C),SIP
Reach Compliance Code compli compli compli compli
Maximum collector current (IC) 8 A 8 A 8 A 8 A
Configuration Single Single Single Single
Minimum DC current gain (hFE) 140 100 140 200
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN PNP PNP PNP
Maximum power dissipation(Abs) 1.5 W 1.5 W 1.5 W 1.5 W
surface mount NO NO NO NO
Base Number Matches 1 1 1 1
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