2SD1316 datasheet, PDF - EEWORLD Datasheet

2SD1316: DescriptionPower Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size330KB，6 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SD1316 Overview

Power Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	25 V
Configuration	DARLINGTON WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	1000
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz
Base Number Matches	1

	2SD1316	2SD1317	2SD1315
Description	Power Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	2 A	4 A	5 A
Collector-emitter maximum voltage	25 V	25 V	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE	DARLINGTON WITH BUILT-IN DIODE	DARLINGTON
Minimum DC current gain (hFE)	1000	1000	5000
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	1.3 W	1.3 W	2 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	20 MHz	20 MHz	20 MHz
Base Number Matches	1	1	1

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