AP80N30W
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
300V
66mΩ
36A
S
Description
AP80N30 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-3P package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
G
D
S
TO-3P
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature
3
.
Rating
300
+30
36
144
208
45
-55 to 150
150
Units
V
V
A
A
W
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.6
40
Units
℃/W
℃/W
1
201502254
Data and specifications subject to change without notice
AP80N30W
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Symbol
V
SD
t
rr
Q
rr
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=30A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=240V, V
GS
=0V
V
GS
= +30V, V
DS
=0V
I
D
=30A
V
DS
=240V
V
GS
=10V
V
DS
=150V
I
D
=30A
R
G
=10Ω
V
GS
=10V
V
GS
=0V
V
DS
=30V
f=1.0MHz
Min.
300
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
-
-
56
-
-
117
28
42
40
90
165
95
525
10
Typ.
-
310
3.5
Max. Units
-
66
4.5
-
25
+0.1
180
-
-
-
-
-
-
-
-
V
mΩ
V
S
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
5700 9120
Source-Drain Diode
.
Test Conditions
I
S
=30A, V
GS
=0V
I
S
=12A, V
GS
=0V
dI/dt=100A/µs
Max. Units
1.5
-
-
V
ns
µC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Starting T
j
=25
o
C , V
DD
=50V , L=0.1mH , R
G
=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP80N30W
120
60
T
C
=25 C
100
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
9.0V
8.0V
7.0V
T
C
=150
o
C
50
10V
9.0V
8.0V
7.0V
V
G
=5.0V
80
40
60
30
40
20
V
G
=5.0V
20
10
0
0.0
4.0
8.0
12.0
16.0
0
0.0
4.0
8.0
12.0
16.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
2.8
T
C
=25 C
I
D
=30A
2.3
o
I
D
=30A
V
G
=10V
Normalized R
DS(ON)
65
R
DS(ON)
(m
Ω
)
1.8
60
.
1.3
55
0.8
50
4
5
6
7
8
9
10
0.3
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
40
1.2
30
Normalized V
GS(th)
1.4
I
S
(A)
1
20
T
j
=150 C
o
T
j
=25 C
o
0.8
10
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP80N30W
f=1.0MHz
12
8000
10
I
D
=30A
V
DS
=240V
6000
V
GS
, Gate to Source Voltage (V)
8
C
iss
C (pF)
6
4000
4
2000
2
0
0
40
80
120
160
0
1
6
11
16
21
26
31
C
oss
C
rss
36
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
100us
Operation in this
area limited by
R
DS(ON)
0.2
0.1
0.1
I
D
(A)
1ms
10
0.05
10ms
100ms
1
.
0.02
0.01
P
DM
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
c
=25 C
Single Pulse
0.1
o
DC
Single Pulse
0.001
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP80N30W
MARKING INFORMATION
Part Number
Package Code
80N30W
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5
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