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2SD1317P

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size268KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

2SD1317P Overview

Transistor

2SD1317P Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)4 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)4000
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.3 W
surface mountNO
Base Number Matches1
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2SD1317P Related Products

2SD1317P 2SD1317Q
Description Transistor Transistor
Reach Compliance Code unknow unknow
Maximum collector current (IC) 4 A 4 A
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 4000 2000
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1.3 W 1.3 W
surface mount NO NO
Base Number Matches 1 1

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