Ordering number : ENN5282A
2SC5291
NPN Epitaxial Planar Silicon Transistor
2SC5291
High-Voltage Switching Applications
Features
•
•
•
•
Package Dimensions
unit : mm
2084B
[2SC5291]
10.5
1.9
4.5
1.2
Adoption of FBET, MBIT processes.
Large current capacity.
Can be provided in taping.
9.5mm onboard mounting height.
2.6
1.4
7.5
1.2
1.6
0.5
1
2
3
1.0
8.5
0.5
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
1 : Emitter
2 : Collector
3 : Base
2.5
2.5
SANYO : FLP
Ratings
180
160
6
1.5
2.5
300
1.5
150
--55 to +150
Unit
V
V
V
A
A
mA
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
VCB=120V, IE=0
VEB=4V, IC=0
Conditions
Ratings
min
typ
max
1.0
1.0
Unit
µA
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-0376 No.5282-1/4
2SC5291
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
ton
tstg
tf
Conditions
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=500mA, IB=50mA
IC=500mA, IB=50mA
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Ratings
min
100
90
120
14
0.13
0.85
4.0
1.2
8.0
0.45
1.2
MHz
pF
V
V
ns
µs
ns
typ
max
400
Unit
* : The 2SC5291 is classified by 100mA hFE as follows :
Rank
hFE
R
S
T
100 to 200 140 to 280 200 to 400
Switching Time Test Circuit
IB1
INPUT
IB2
RB
PW=20µs
D.C.=≤1%
RL
50Ω
VR
+
100µF
VBE= --5V
+
470µF
VCC=100V
OUTPUT
10IB1=--10IB2=IC=700mA
RL=140Ω, RB=14Ω at IC=700mA
1.8
1.6
IC -- VCE
1.0
IC -- VCE
A
4.5m
mA
.0
4
3.5mA
3.0mA
5.0
m
A
Collector Current, IC -- A
1.2
1.0
0.8
0.6
Collector Current, IC -- A
1.4
50mA
40mA
30mA
20mA
10mA
5mA
0.8
0.6
2.5mA
2.0mA
0.4
1.5mA
1.0mA
2mA
0.4
0.2
1mA
0.2
0
0.5mA
0
IB=0
0
1
2
3
4
5
ITR08045
IB=0
0
10
20
30
40
50
ITR08046
Collector-to-Emitter Voltage, VCE -- V
1.6
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
1000
7
5
hFE -- IC
VCE=5V
VCE=5V
Collector Current, IC -- A
DC Current Gain, hFE
1.2
3
2
Ta=75
°
C
25
°
C
0.8
100
7
5
3
2
--25
°
C
0.4
0
Ta=
75
°
C
25
°
C
--25
°
C
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR08047
10
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
ITR08048
No.5282-2/4
2SC5291
5
fT -- IC
VCE=10V
100
7
Cob -- VCB
f=1MHz
Gain-Bandwidth Product, f T -- MHz
3
Output Capacitance, Cob -- pF
5
2
3
2
100
7
5
10
7
5
3
2
(For PNP, minus sign is omitted.)
10
0.01
2
3
5
7
0.1
2
3
5
7
Collector Current, IC -- A
3
1.0
ITR08049
2
3
1
(For PNP, minus sign is omitted.)
2
3
5
7
10
2
3
5
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
10
7
100
ITR08050
7
VBE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
IC / IB=10
1000
7
5
3
2
5
3
2
100
7
5
3
2
7 0.01
2
1.0
7
5
Ta= --25
°C
75
°
C
25
°C
Ta=75
°C
--25
°C
3
25
°
C
5 7
0.1
2
3
5
7 1.0
2
3
3
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
5
3
2
ITR08051
1.6
1.5
1.4
Collector Current, IC -- A
ITR08052
Forward Bias A S O
ICP=2.5A
IC=1.5A
PC -- Ta
Collector Current, IC -- A
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
Collector Dissipation, PC -- W
2
7 100
V
ITR08053
10
ms
10
0m
s
DC
op
1m
s
1.2
1.0
0.8
0.6
0.4
0.2
0
era
t
ion
Tc=25°C
Single pulse
5 7
1.0
2
3
5
7
10
2
3
5
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE --
Ambient Temperature, Ta --
°C
ITR08054
No.5282-3/4
2SC5291
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2001. Specifications and information herein are subject
to change without notice.
PS No.5282-4/4
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EEWORLD
