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2SC3790D

Description
TRANSISTOR,BJT,NPN,300V V(BR)CEO,100MA I(C),TO-126
CategoryDiscrete semiconductor    The transistor   
File Size42KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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2SC3790D Overview

TRANSISTOR,BJT,NPN,300V V(BR)CEO,100MA I(C),TO-126

2SC3790D Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)60
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)7 W
surface mountNO
Nominal transition frequency (fT)150 MHz
Base Number Matches1
Ordering number:ENN2254
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1480/2SC3790
High-Definiton CRT Display
Video Output Applications
Features
· High breakdown voltage (V
CEO
≥300V).
· Small reverse transfer capacitance and excellent high
frequency characteristic
: C
re
=1.8pF (NPN), 2.3pF (PNP).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2042B
[2SA1480/2SC3790]
8.0
1.0
4.0
1.0
1.4
3.3
3.0
1.6
0.8
1.5
3.0
0.8
0.75
7.5
15.5
11.0
0.7
1
2
3
( ) : 2SA1480
4.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.7
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
(–)300
(–)300
(–)5
(–)100
(–)200
1.5
Unit
V
V
V
mA
mA
W
W
Tc=25˚C
7
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
VCB=(–)200V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
40*
150
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
320*
MHz
Unit
µA
µA
* : The 2SA1480/2SC3790 are classified by 10mA h
FE
as follows :
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
F
160 to 320
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103TN (KT)/71598HA (KT)/4087TA, TS No.2254-1/5

2SC3790D Related Products

2SC3790D 2SC3790F 2SA1480C 2SA1480F
Description TRANSISTOR,BJT,NPN,300V V(BR)CEO,100MA I(C),TO-126 TRANSISTOR,BJT,NPN,300V V(BR)CEO,100MA I(C),TO-126 TRANSISTOR,BJT,PNP,300V V(BR)CEO,100MA I(C),TO-126 TRANSISTOR,BJT,PNP,300V V(BR)CEO,100MA I(C),TO-126
Reach Compliance Code compli compli compli compli
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Configuration Single Single Single Single
Minimum DC current gain (hFE) 60 160 40 160
Maximum operating temperature 150 °C 150 °C 140 °C 140 °C
Polarity/channel type NPN NPN PNP PNP
Maximum power dissipation(Abs) 7 W 7 W 7 W 7 W
surface mount NO NO NO NO
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz
Base Number Matches 1 1 1 1
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