Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1138
DESCRIPTION
·With
TO-220C package
·Complement
to type 2SB861
APPLICATIONS
·Low
frequency high voltage power
amplifier TV vertical deflection output
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
·
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
30
150
-45~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
150
6
2
5
1.8
W
UNIT
V
V
V
A
A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
h
FE-1
h
FE-2
C
OB
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
DC current gain
DC current gain
Output capacitance
CONDITIONS
I
C
=50mA; R
BE
=∞
I
E
=5mA; I
C
=0
I
C
=0.5 A;I
B
=50m A
I
C
=50mA ; V
CE
=4V
V
CB
=120V; I
E
=0
I
C
=50mA ; V
CE
=4V
I
C
=0.5A ; V
CE
=10V
I
E
=0 ;V
CB
=100V,f=1MHz
60
60
20
MIN
150
6
TYP.
2SD1138
MAX
UNIT
V
V
3.0
1.0
1
320
V
V
μA
pF
h
FE-1
classifications
B
60-120
C
100-200
D
160-320
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1138
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1138
4
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