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2SC4523STP-FA

Description
Small Signal Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size89KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SC4523STP-FA Overview

Small Signal Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4 PIN

2SC4523STP-FA Parametric

Parameter NameAttribute value
Objectid1543717459
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)140
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)620 ns
Maximum opening time (tons)100 ns
Ordering number:EN3142A
NPN Epitaxial Planar Silicon Transistors
2SC4523
High-Speed Switching Applications
Features
· Adoption of FBET, MBIT process.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
Package Dimensions
unit:mm
2045B
[2SC4522]
1.5
6.5
5.0
4
2.3
0.5
0.85
0.7
5.5
7.0
0.8
1.6
1.2
0.6
0.5
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
unit:mm
2044B
6.5
5.0
4
[2SC4522]
2.3
1.5
7.5
0.5
5.5
7.0
0.85
1
0.6
0.8
0.5
2
3
2.5
1.2
1.2
0~0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11299HA (KT)/7130MH/7059MO, TS No.3142–1/4

2SC4523STP-FA Related Products

2SC4523STP-FA 2SC4523RTP 2SC4523RTP-FA 2SC4523STP 2SC4523TTP 2SC4523TTP-FA 2SC4523TP-FA 2SC4523TP
Description Small Signal Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4 PIN Small Signal Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4 PIN Small Signal Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TP, 3 PIN Small Signal Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4 PIN Small Signal Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TP-FA, 4 PIN Small Signal Bipolar Transistor, 8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TP, 3 PIN
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts 4 3 4 3 3 4 4 3
Reach Compliance Code unknown unknow unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 8 A 8 A 8 A 8 A 8 A 8 A 8 A 8 A
Collector-emitter maximum voltage 45 V 45 V 45 V 45 V 45 V 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 140 100 100 140 200 200 40 40
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSIP-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 2 3 2 3 3 2 2 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO YES NO NO YES YES NO
Terminal form GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
Maximum off time (toff) 620 ns 620 ns 620 ns 620 ns 620 ns 620 ns 620 ns 620 ns
Maximum opening time (tons) 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns 100 ns
Objectid 1543717459 - 1543717457 1543717460 1543717464 1543717463 1543717461 1543717462
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
Maximum power dissipation(Abs) 15 W 15 W 15 W 15 W 15 W 15 W - -
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