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2SK1578C

Description
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size119KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SK1578C Overview

Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN

2SK1578C Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Maximum drain current (ID)0.001 A
FET technologyJUNCTION
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
Ordering number:EN4178A
N-Channel Junction FET
2SK1578
Capacitor Microphone Applications
Features
· Especially suited for use in audio, telephone capaci-
tor microphones.
· Excellent voltage characteristics.
· Excellent transient characteristics.
· Adoption of FBET process.
Package Dimensions
unit:mm
2034A
[2SK1578]
4.0
2.2
0.4
0.5
0.6
0.4
1.8
15.0
3.0
0.4
1 2
1.3
3
1.3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
3.0
3.8nom
1 : Source
2 : Gate
3 : Drain
SANYO : SPA
0.7
0.7
Ratings
–20
10
1
100
150
–55 to +150
Unit
V
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Votlage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)GDO IG=–100µA
VGS(off) VDS=5V, ID=1µA
IDSS
| yfs |
Ciss
Crss
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
Conditions
Ratings
min
–20
–0.2
100*
0.4
1.2
4.1
0.88
–0.6
–1.5
800*
typ
max
Unit
V
V
µA
mS
pF
pF
* : The 2SK1578 is classified by I
DSS
as follows : (unit :
µA)
100
A
170
150
B
240
210
C
350
320
D
480
440
E
800
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61599TH (KT)/72297TS (KOTO)/12094TH (KOTO) 8-7215 No.4178–1/4

2SK1578C Related Products

2SK1578C 2SK1578D
Description Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SPA, 3 PIN
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Maximum drain current (ID) 0.001 A 0.001 A
FET technology JUNCTION JUNCTION
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Operating mode DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.1 W 0.1 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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