Transistors
2SD1991A
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1320A
(0.7)
Unit: mm
6.9
±0.1
(4.0)
2.5
±0.1
(0.8)
(1.0)
3.5
±0.1
■
Features
•
High forward current transfer ratio h
FE
•
Low collector-emitter saturation voltage V
CE(sat)
•
Allowing supply with the radial taping
0.65 max.
(0.85)
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
60
50
7
100
200
400
150
−55
to
+150
Unit
V
V
V
mA
mA
mW
°C
°C
1
2
3
0.45
+0.10
–0.05
2.5
±0.5
14.5
±0.5
1.05
±0.05
2.5
±0.5
0.45
+0.10
–0.05
1: Emitter
2: Collector
3: Base
MT-1-A1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
= 10 V, I
C
= 2 mA
V
CE
= 2 V, I
C
= 100 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
160
90
0.1
150
3.5
0.3
V
MHz
pF
Min
60
50
7
1
1
460
Typ
Max
Unit
V
V
V
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
160 to 260
R
210 to 340
S
290 to 460
No rank
160 to 460
Product of no-rank classification is not marked.
(0.8)
Publication date: April 2003
SJC00234BED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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Consult our sales staff in advance for information on the following applications:
•
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•
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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Even when the products are used within the guaranteed values, take into the consideration of
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2002 JUL
Microcontroller MCU
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