AP83T03AGMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
SO-8 Compatible with Heatsink
▼
Low On-resistance
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
6mΩ
71A
D
S
Description
AP83T03A series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK 5x6 ppackage is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
®
D
D
D
S
S
S
G
PMPAK 5x6
®
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), V
GS
@ 10V
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
3
Rating
30
+20
71
23.2
18.6
200
50
5
45
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
mJ
℃
℃
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
2.5
25
Unit
℃/W
℃/W
1
201412183
Data and specifications subject to change without notice
AP83T03AGMT-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=20A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=20A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
55
-
-
10
3
5
10
10
26
12
360
120
1.5
Max. Units
-
6
9
3
-
10
+100
16
-
-
-
-
-
-
-
-
3
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1050 1680
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=20A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
21
14
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 60 C/W at steady state.
o
4.Starting T
j
=25 C , V
DD
=30V , L=0.1mH , R
G
=25Ω , I
AS
=30A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP83T03AGMT-HF
200
120
T
C
=25 C
160
o
10V
7.0V
6.0V
5.0V
I
D
, Drain Current (A)
T
C
= 150
o
C
100
I
D
, Drain Current (A)
80
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
120
V
G
= 4.0V
80
60
40
40
20
0
0
4
8
12
16
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
8
1.8
I
D
= 20 A
T
C
=25
o
C
7
1.6
I
D
=20A
V
G
=10V
Normalized R
DS(ON)
2
4
6
8
10
R
DS(ON)
(m
Ω
)
1.4
6
1.2
1.0
5
0.8
4
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
I
D
=250uA
16
1.2
12
T
j
=150 C
8
o
T
j
=25 C
o
Normalized V
GS(th)
I
S
(A)
0.8
0.4
4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP83T03AGMT-HF
10
2000
f=1.0MHz
I
D
= 20 A
V
DS
=15V
V
GS
, Gate to Source Voltage (V)
8
1600
6
C (pF)
1200
C
iss
800
4
2
400
C
oss
C
rss
0
0
4
8
12
16
20
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
Operation in this area
limited by R
DS(ON)
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
I
D
(A)
100us
0.1
0.1
0.05
10
1ms
10ms
100ms
DC
10
100
P
DM
t
0.02
T
0.01
T
C
=25 C
Single Pulse
1
0.1
1
o
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
c
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
80
V
DS
=5V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
T
j
=25 C
T
j
= -40
o
C
o
60
60
40
40
20
T
j
=150
o
C
20
0
0
0
1
2
3
4
5
6
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
C
, Case Temperature (
o
C)
Fig 11. Transfer Characteristics
Fig 12. Drain Current v.s. Case
Temperature
4
AP83T03AGMT-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code : MT
83T03AGMT
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
京公网安备 11010802033920号
EEWORLD
